采用高压釜水热法和电沉积法制备了FTO@TiO₂（TNRAs）和FTO@TiO₂@CuPc （CTNRAs）纳米阵列，优化了CTNRAs的CuPc电沉积时间，并对比分析了CTNRAs和TNRAs形貌、物相组成和光电催化性能。结果表明，随着电沉积时间的延长，CTNRAs表面CuPc负载量逐渐增大，而光电流密度先增加后减小，CTNRAs的最优CuPc电沉积时间为60 s，此时具有最大的光电流密度和光电流密度增长率。在TNRAs基板上电沉积CuPc不会改变纳米阵列的原始结构，CTNRAs中CuPc成功沉积在TNRAs表面并实现了良好接触。1.23V_RHE时CTNRAs的光电转换效率高于TNRAs，380 nm处TNRAs的光电转换效率约为CTNRAs的46.7%，且连续照射8 h后CTNRAs仍具有较好的光电化学稳定性，这主要是因为CTNRAs具有垂直于基板生长的纳米阵列以及电沉积CuPc层，有助于提升二氧化钛基纳米阵列的光电转换效率。

FTO@TiO₂ (TNRAs) and FTO@TiO₂@CuPc (CTNRAs) samples are prepared by autoclave hydrothermal method and electrodeposition method.The electrodeposition time of CuPc for CTNRAs is optimized, and the micro morphology, phase composition and photoelectrocatalytic performances of CTNRAs and TNRAs are compared and analyzed.The results show that with the prolongation of electrodeposition time, the amount of CuPc loaded on the surface of CTNRAs increases gradually, while the photocurrent density first increases and then decreases.The optimal electrodeposition time of CuPc for CTNRAs is 60 s, under which the prepared CTNRAs have the highest photocurrent density and the largest growth rate of photocurrent density.The electrodeposition of CuPc on TNRAs substrate does not change the original structure of nano array.CuPc in CTNRAs is successfully deposited on TNRAs surface and achieves good contact.At 1.23 V_RHE, the photoelectric conversion efficiency of CTNRAs is higher than that of TNRAs.At 380 nm, the photoelectric conversion efficiency of TNRAs is about 46.7% that of CTNRAs.After continuous irradiation for 8 h, CTNRAs has remained good photoelectrochemical stability, which is mainly because CTNRAs own nano arrays grown perpendicular to the substrate, and CuPc layer electrodeposited, which helps to improve the photoelectric conversion efficiency of titanium dioxide-based nano arrays.